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Results 1 to 25 of 33

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Validation of a simulation program for photovoltaic systemsAMBROSONE, G; CATALANOTTI, S; COSCIA, U et al.Journal de physique 3, Applied physics, materials science, fluids, plasma and instrumentation. 1991, Vol 1, Num 12, pp 2017-2026Article

Comparison between power and energy methods of analyses of photovoltaic plantsAMBROSONE, G; CATALANOTTI, S; COSCIA, U et al.Solar energy. 1985, Vol 34, Num 1, pp 1-8, issn 0038-092XArticle

The reliability of photovoltaic fields as a result of a simulation programmeAMBROSONE, G; CATALANOTTI, S; TROISE, G et al.E.C. Photovoltaic solar energy conference. 6. 1985, pp 377-381Conference Paper

The SAPV simulation programAMBROSONE, G; CATALANOTTI, S; COSCIA, U et al.Journal de physique 3, Applied physics, materials science, fluids, plasma and instrumentation. 1991, Vol 1, Num 12, pp 2001-2015Article

A dynamic model for the thermal energy management of buildingsAMBROSONE, G; CATALANOTTI, S; MATARAZZO, M et al.Applied energy. 1983, Vol 15, Num 4, pp 285-297, issn 0306-2619Article

A formula for the power in partially failed PV fieldsAMBROSONE, G; CATALANOTTI, S; COSCIA, U et al.Revue de physique appliquée. 1983, Vol 18, Num 10, pp 645-649, issn 0035-1687Article

ENERGY SAVING IN BUILDING DESIGNAMBROSONE G; ANDRETTA A; BLOISI F et al.1980; APPL. ENERGY; ISSN 0306-2619; GBR; DA. 1980; VOL. 6; NO 6; PP. 429-446; BIBL. 9 REF.Article

Morphological and structural modifications induced in a-Si1―xCx:H films by excimer laser annealingCOSCIA, U; AMBROSONE, G; BASA, D. K et al.Applied physics. A, Materials science & processing (Print). 2010, Vol 100, Num 4, pp 1163-1168, issn 0947-8396, 6 p.Article

Structural modification of laser annealed a-Si1-xCx:H filmsCOSCIA, U; AMBROSONE, G; MINARINI, C et al.Applied surface science. 2006, Vol 252, Num 13, pp 4493-4496, issn 0169-4332, 4 p.Conference Paper

Infrared absorption of a-SiC:H as a function of the annealing temperatureMURRI, R; PINTO, N; GIULIODORI, S et al.Journal of materials science. Materials in electronics. 2003, Vol 14, Num 5-7, pp 341-344, issn 0957-4522, 4 p.Conference Paper

Optimized structure of a three-level photovoltaic sub-array to prevent damage due to failed cellsAMBROSONE, G; CATALANOTTI, S; COSCIA, U et al.Solar cells. 1987, Vol 20, Num 1, pp 41-50, issn 0379-6787Article

Photovoltaic fields: influence of the array structure on power loss due to cell failuresAMBROSONE, G; CATALANOTTI, S; COSCIA, U et al.Applied energy. 1985, Vol 20, Num 1, pp 47-67, issn 0306-2619Article

LONG-TERM PERFORMANCE OF FLAT-PLATE SOLAR COLLECTORSAMBROSONE G; ANDRETTA A; BLOISI F et al.1980; APPL. ENERGY; ISSN 0306-2619; GBR; DA. 1980; VOL. 7; NO 1-3; PP. 119-128; BIBL. 12 REF.Article

Correlation between structural and opto-electronic properties of a-Si1-xCx:H films deposited by plasma enhanced chemical vapour depositionAMBROSONE, G; BASA, D. K; COSCIA, U et al.Thin solid films. 2010, Vol 518, Num 20, pp 5871-5874, issn 0040-6090, 4 p.Article

Crystallization of hydrogenated amorphous silicon carbon films with laser and thermal annealingBASA, D. K; AMBROSONE, G; COSCIA, U et al.Applied surface science. 2009, Vol 255, Num 10, pp 5528-5531, issn 0169-4332, 4 p.Conference Paper

SiNx/a-Sicx:H passivation layers for p-and n-type crystalline silicon wafersCOSCIA, U; AMBROSONE, G; RAVA, P et al.Thin solid films. 2008, Vol 516, Num 7, pp 1569-1573, issn 0040-6090, 5 p.Conference Paper

Low temperature electric transport properties in hydrogenated microcrystalline silicon filmsAMBROSONE, G; COSCIA, U; CASSINESE, A et al.Thin solid films. 2007, Vol 515, Num 19, pp 7629-7633, issn 0040-6090, 5 p.Conference Paper

Structural and optical properties of amorphous hydrogenated silicon carbonitride films produced by PECVDVASSALLO, E; CREMONA, A; GHEZZI, F et al.Applied surface science. 2006, Vol 252, Num 22, pp 7993-8000, issn 0169-4332, 8 p.Article

Structural, optical and electrical properties of helium diluted a-Si1-xCx:H films deposited by PECVDLOULOU, M; GHARBI, R; FATHALLAH, M. A et al.Journal of non-crystalline solids. 2006, Vol 352, Num 9-20, pp 1388-1391, issn 0022-3093, 4 p.Conference Paper

Growth-etching competitive mechanism governing the structure and chemical composition of plasma-deposited silicon-based materialsAMBROSONE, G; BRUNO, G; CAPEZZUTO, P et al.Philosophical magazine. B. Physics of condensed matter. Statistical mechanics, electronic, optical and magnetic properties. 2000, Vol 80, Num 4, pp 487-496, issn 1364-2812Conference Paper

Photoconductivity of multiwalled CNT deposited by CVDCOSCIA, U; AMBROSONE, G; RAULO, A et al.Solid state sciences. 2009, Vol 11, Num 10, pp 1806-1809, issn 1293-2558, 4 p.Conference Paper

Silicon-carbon films deposited at low substrate temperatureAMBROSONE, G; COSCIA, U; LETTIERI, S et al.Journal of non-crystalline solids. 2006, Vol 352, Num 9-20, pp 1371-1375, issn 0022-3093, 5 p.Conference Paper

Crystallization of hydrogenated amorphous silicon-carbon films by means of laser treatmentsAMBROSONE, G; COSCIA, U; LETTIERI, S et al.Applied surface science. 2005, Vol 247, Num 1-4, pp 471-476, issn 0169-4332, 6 p.Conference Paper

Deposition of microcrystalline silicon-carbon alloys in low power regimeAMBROSONE, G; BARUCCA, G; COSCIA, U et al.Journal of non-crystalline solids. 2004, Vol 338-40, pp 163-167, issn 0022-3093, 5 p.Conference Paper

Power density effects on the growth of microcrystalline silicon-carbon alloys by PECVDCOSCIA, U; AMBROSONE, G; LETTIERI, S et al.Thin solid films. 2003, Vol 427, Num 1-2, pp 284-288, issn 0040-6090, 5 p.Conference Paper

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